Semiconductor interconnect having adjacent reservoir for...

Semiconductor device manufacturing: process – Bonding of plural semiconductor substrates

Reexamination Certificate

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C257SE21503, C257SE21576, C438S624000

Reexamination Certificate

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07579258

ABSTRACT:
A semiconductor device and method has interconnects with adjoining reservoir openings. A dielectric layer is formed as part of an uppermost of the one or more interconnect layers. Openings formed in the dielectric layer result in modified portions of the dielectric layer along portions of sidewalls of the openings. The openings are filled with a conductive material, such as metal. An exposed portion of the dielectric layer is removed to form protruding pads of the conductive material extending above the dielectric layer. Reservoir openings are formed adjacent the protruding pads by removing the modified portions of the dielectric layer. When the semiconductor device is bonded with another device, either a wafer or a die, laterally flowing metal collects in the reservoir openings and ensures that a reliable electrical connection is made between the semiconductor device and the other device.

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PCT/US06/61737 International Search Report.

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