Semiconductor integration device and fabrication method of the s

Details Semiconductor integration device and fabrication method of the s Semiconductor integration device and fabrication method of the s

1998-03-12

2000-09-05

Hardy, David

Active solid-state devices (e.g., transistors, solid-state diode

Bipolar transistor structure

With specified electrode means

257773, H01L 29732

Patent

active

061147443

ABSTRACT:
A lead electrode is formed to expose an active base region. A lead electrode for an emitter electrode is formed on the lead electrode in an emitter region, through an insulating film. The insulating film on the lead electrode is then etched to form a contact hole. After that, the emitter contact hole is formed to expose the lead electrode. Also, a silicon nitride film SN is interposed between the lead electrode and insulating film and between the lead electrode and LOCOS oxide film each to decrease resistance of the lead electrodes.

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