Semiconductor integrated injection logic structure controlled by

Details Semiconductor integrated injection logic structure controlled by Semiconductor integrated injection logic structure controlled by

1978-07-13

1981-07-07

Larkins, William D.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

307296R, 307303, 307477, 357 92, H03K 19091, H01L 2704, G11C 1140

Patent

active

042777011

ABSTRACT:
Integrated Injection Logic (I.sup.2 L) Structures are disclosed. The disclosure includes integrated injection logic cell structures of the type including an injector and a plurality of adjacent NPN transistors spaced from said injector, characterized in that at least two PNP transistors have different factors L.sub.B /W.sub.B, where L.sub.B is the base dimension of the NPN transistor opposite the injector, and W.sub.B is the base width of the PNP transistor of the injector.

REFERENCES:
patent: 3643235 (1972-02-01), Berger et al.
patent: 3798621 (1974-03-01), Baitinger
patent: 3801967 (1974-04-01), Berger et al.
patent: 3993918 (1976-11-01), Sinclair
patent: 4056810 (1977-11-01), Hart et al.
patent: 4156154 (1979-05-01), Iizuka
patent: 4160173 (1979-07-01), Aoki
Ho et al., "Latent image . . . ", Electronics, Aug. 16, 1971, pp. 82-85.
Tucci et al., IEEE Journal of Solid State Circuits, Dec. 1976, pp. 847-851.
Hart et al., Philips Technical Review, vol. 33, No. 3, 1973, pp. 76-85.

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