Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Reexamination Certificate
2008-03-03
2009-11-17
Ha, Nathan W (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
C257SE31127
Reexamination Certificate
active
07619292
ABSTRACT:
A semiconductor integrated device comprises: a light-shielding film which shields at least some part of a transfer section of the semiconductor integrated device from light; a first wiring formed in the same layer as the light-shielding film, with one end connected to a pad electrode and an other end extended to a side edge of the semiconductor substrate; a second wiring arranged to go around a side face of the semiconductor substrate, and connected to the first wiring; and a sealing member which seals the solid-state image sensor.
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Ogo Takahiko
Okada Yoshihiro
Sasaki Kaoru
Ha Nathan W
Hogan & Hartson LLP
Sanyo Electric Co,. Ltd.
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