Semiconductor integrated device

Details Semiconductor integrated device Semiconductor integrated device

2007-02-06

2007-02-06

Patel, Rajnikant B. (Department: 2838)

Active solid-state devices (e.g., transistors, solid-state diode

Housing or package

With contact or lead

C257S786000, C307S402000, C307S402000

Reexamination Certificate

active

10874207

ABSTRACT:
The present invention provides a semiconductor integrated device which can suppress high-frequency noise and which can thus stabilize the output voltage and power supply voltage of the reference voltage generating circuit. This semiconductor integrated device comprises a reference voltage generating circuit, a first bonding pad which is connected to the output of this reference voltage generating circuit, a lead which is connected to this first bonding pad via a first bonding wire, a second bonding pad which is connected to this lead via a second bonding wire, and a circuit which generates high-frequency noise and is connected to this second bonding pad.

REFERENCES:
patent: 4800365 (1989-01-01), White et al.
patent: 5815100 (1998-09-01), Rush et al.
patent: 08-274261 (1996-10-01), None
patent: 2002-110926 (2002-04-01), None

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