Semiconductor integrated circuits and method of manufacturing th

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357 59, 357 89, 357 38, H01L 2712, H01L 2904

Patent

active

039901025

ABSTRACT:
Semiconductor integrated circuits comprising a dielectric isolation semiconductor chip having a plurality of monocrystalline semiconductor regions electrically separated by a polycrystalline semiconductor and dielectric insulation films, and circuit elements formed in the monocrystalline regions, wherein the polycrystalline substrate includes a high resistivity layer and a low resistivity layer, at least the high resistivity layer is adjacent to the monocrystalline region and the low resistivity region is coupled to a contact provided on a surface of the chip, whereby an electrostatic coupling between the circuit elements is shielded by the low resistivity layer to prevent cross-talks due to the electrostatic coupling. A method of manufacturing the same is also disclosed.

REFERENCES:
patent: 3624463 (1971-11-01), Davidsohn
patent: 3817799 (1974-06-01), Schtze et al.

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