Semiconductor integrated circuit with vertical implanted polycry

Details Semiconductor integrated circuit with vertical implanted polycry Semiconductor integrated circuit with vertical implanted polycry

1981-01-08

1983-11-22

Ozaki, G.

Metal working

Method of mechanical manufacture

Assembling or joining

29577R, 29589, 29590, 29610R, 148187, 357 51, 357 59, H01L 2122

Patent

active

044160496

ABSTRACT:
Integrated circuit resistor elements which may be used as load devices in static MOS RAM cells are created vertically in polycrystalline silicon ion implanted to provide the desired resistivity. The method of making these devices is compatible with a standard self-aligned N-channel silicon-gate process. The cell size is reduced as the resistors can overly other elements, and an efficient layout provides a very small cell area.

REFERENCES:
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patent: 3570114 (1971-03-01), Bean et al.
patent: 4110776 (1978-08-01), Rao et al.
patent: 4146902 (1979-03-01), Tanimoto et al.
patent: 4178674 (1979-12-01), Liu et al.
patent: 4187602 (1980-02-01), McElroy
patent: 4208781 (1980-01-01), Rao et al.
patent: 4214917 (1980-07-01), Clark et al.
patent: 4246692 (1981-01-01), Rao

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