Semiconductor integrated circuit with protection circuit against

Details Semiconductor integrated circuit with protection circuit against Semiconductor integrated circuit with protection circuit against

1994-02-14

1996-03-19

Ngo, Ngan V.

Active solid-state devices (e.g., transistors, solid-state diode

Gate arrays

With particular signal path connections

257203, 257211, 257356, H01L 2710, H01L 2362

Patent

active

055005420

ABSTRACT:
Diodes rows are arranged at interval L in the same direction as that of arrangement of cell rows. Each of the diodes rows has a row of pn junctions each formed on a substrate and arranged along a track vertical to interconnection tracks. The interconnection between cells automatically connect the gates of MOS transistors to the diodes without the need for considering which gate should be connected to the diode. The length of wiring between the gate of MOS transistor and a diode is less than an upper limit value for preventing electrostatic breakdown at a gate oxide in a process of fabricating the semiconductor integrated circuit. Each of the pn junctions may be formed under necessary input signal lines, necessary ground line, the bottom of the drain of MOS transistor or under the power supply line outside of macrocell.

REFERENCES:
patent: 4922316 (1990-05-01), Sato

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