Static information storage and retrieval – Powering – Data preservation
Reexamination Certificate
2006-04-27
2008-07-15
Ho, Hoai V (Department: 2827)
Static information storage and retrieval
Powering
Data preservation
C365S185200, C365S185210, C365S185230, C365S205000, C365S227000
Reexamination Certificate
active
07400547
ABSTRACT:
A semiconductor integrated circuit has a sense amplifier which senses and outputs data read out from memory cells connected to word lines and bit lines, and a read-out control circuit which has a standby state consuming minimum necessary power and a read state reading out the memory cells, and controls read-out of the memory cells, wherein the read-out control circuit includes, a bit line switching circuit which switches whether or not to transmit a potential on the bit line to an input terminal of the sense amplifier, and a first switching control circuit which controls the bit line switching circuit to prevent the potential on the bit line from being transmitted to the input terminal of the sense amplifier during a period of the standby state and a predetermined period after the standby state is released.
REFERENCES:
patent: 6418075 (2002-07-01), Shimano et al.
patent: 6856549 (2005-02-01), Yamauchi
patent: 7046573 (2006-05-01), Takazawa et al.
Yasoji Suzuki, “A Semiconductor MOS Memory and it's Usage”, Daily Publication Industrial Newspaper Publishing Company, Aug. 1990, pp. 82-83 and 2 cover pages.
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