Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Patent
1992-01-28
1993-10-12
Hille, Rolf
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
257461, H01L 2714, H01L 3100
Patent
active
052528510
ABSTRACT:
An optical semiconductor is integrated with a transistor by epitaxially growing a lightly doped epitaxial layer on a substrate. One isolated island area of the epitaxial layer contains a diffusion area on its surface to form the optical semiconductor. A second isolated island area has its conductivity type inverted by a buried layer that is diffused upward into contact with a surface layer that is diffused downward. The upward-diffused and downward-diffused layers unite to form a collector of the transistor. A base area in the surface of the collector contains an emitter in its surface. The emitter and the diffusion area are formed of the same material, and in the same process steps.
REFERENCES:
patent: 4831430 (1989-05-01), Umeji
patent: 5101253 (1992-03-01), Mizutani et al.
Mita Keizi
Ohkoda Toshiyuki
Takada Tadayoshi
Takahashi Tsuyoshi
Hille Rolf
Morrison Thomas R.
Sanyo Electric Co,. Ltd.
Tran Minhloan
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