Electricity: measuring and testing – Impedance – admittance or other quantities representative of... – Lumped type parameters
Reexamination Certificate
2005-03-08
2005-03-08
Nguyen, Vincent Q. (Department: 2858)
Electricity: measuring and testing
Impedance, admittance or other quantities representative of...
Lumped type parameters
C324S719000, C360S046000
Reexamination Certificate
active
06864693
ABSTRACT:
A semiconductor integrated circuit is provided in which a negative voltage generation circuit capable of supplying a memory cell transistor substrate with a stable negative voltage, independently of the fluctuation of a power source voltage or environmental conditions and the process conditions etc., is realized easily, and in which the data holding time of a memory can be secured sufficiently, and the power consumption is reduced. A voltage detection part1-B included in the negative voltage generation circuit is provided with a constant voltage generation circuit1-B1, a measuring voltage generation circuit1-B3, which receives a constant voltage STDVOUT sent from the constant voltage generation circuit via a voltage supplying circuit1-B2and a negative voltage VBB sent from a negative voltage generation part and converts it into a measuring voltage REFV0by resistors R1′, R2′, a first comparator AMP12,which compares the measuring voltage sent from the measuring voltage generation circuit with ground voltage and outputs the result of comparison, and an output buffer circuit1-B4′, which amplifies the compared output from the first comparator and outputs it to the negative voltage generation part.
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Fujimoto Tomonori
Kondo Masataka
Ohta Kiyoto
Merchant & Gould P.C.
Nguyen Vincent Q.
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