Semiconductor integrated circuit with implanted resistor element

Details Semiconductor integrated circuit with implanted resistor element Semiconductor integrated circuit with implanted resistor element

1976-09-27

1978-08-29

James, Andrew J.

357 51, 357 59, 357 91, H01L 2978, H01L 2702, H01L 2904

Patent

active

041107764

ABSTRACT:
Resistor elements for MOS integrated circuits are made by an ion implant step compatible with a self-aligned N-channel silicon-gate process. The resistor elements are in a part of a polycrystalline silicon layer which is also used as a gate for an MOS transistor and as an interconnection overlying field oxide. Resistors of this type are ideally suited for load devices in static RAM cells.

REFERENCES:
patent: B504503 (1976-03-01), Vamada
patent: 3576478 (1971-04-01), Watkins
patent: 3975221 (1976-08-01), Rodgers
patent: 4033797 (1977-07-01), Dill et al.
IBM Technical Bulletin; Trimming of Ion Implanted Resistors, vol. 13, No. 6, Nov. 1970, p. 1698.
IBM Technical Bulletin by Freeman et al., vol. 14, No. 11, Apr. 1972, p. 3338.
IBM Technical Bulletin, Ion Implanted Polycrystalline Silicon FET Gates; vol. 16, No. 9, Feb. 1974, p. 2901.

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