Semiconductor integrated circuit with implanted resistor element

Details Semiconductor integrated circuit with implanted resistor element Semiconductor integrated circuit with implanted resistor element

1977-05-31

1980-06-24

James, Andrew

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

357 23, 357 71, 307303, 307238, H01L 2904, H01L 2978, H01L 2348

Patent

active

042097169

ABSTRACT:
Integrated circuit resistor elements ideally suited for load devices in static MOS RAM cells are made in second-level polycrystalline silicon by an ion implant step compatible with a self-aligned N-channel silicon-gate process. The cell size is reduced as the resistors can overly the first-level poly or MOS transistors. The second-level poly does not form transistor gates, so it is less critical, and an efficient layout provides a very small cell area.

REFERENCES:
patent: T964009 (1977-11-01), Chiu et al.
patent: 3519901 (1970-07-01), Bean et al.
patent: 3576478 (1971-04-01), Watkins
patent: 3667008 (1972-05-01), Katnack
patent: 3792384 (1974-02-01), Hunt
patent: 3902188 (1975-08-01), Jacobson
patent: 3936865 (1976-02-01), Robinson
patent: 4041518 (1977-08-01), Shimizu et al.
patent: 4055444 (1977-10-01), Rao
patent: 4070653 (1978-01-01), Rao et al.
patent: 4110776 (1978-08-01), Rao et al.
patent: 4112509 (1978-09-01), Wall
patent: 4131906 (1978-12-01), Kinoshita

Affiliated with

Also associated with

Rating

Semiconductor integrated circuit with implanted resistor element does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor integrated circuit with implanted resistor element, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor integrated circuit with implanted resistor element will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1482091