Semiconductor integrated circuit with implanted resistor element

Details Semiconductor integrated circuit with implanted resistor element Semiconductor integrated circuit with implanted resistor element

1978-06-15

1980-06-24

Tupman, W. C.

Metal working

Method of mechanical manufacture

Assembling or joining

29590, 29610R, 29576C, 29576B, 29571, B01J 1700

Patent

active

042087813

ABSTRACT:
Resistor elements for MOS integrated circuits are made by an ion implant step compatible with a self-aligned N-channel silicon-gate process. The resistor elements are in a part of a polycrystalline silicon layer which is also used as a gate for an MOS transistor and as an interconnection overlying field oxide. Resistors of this type are ideally suited for load devices in static RAM cells.

REFERENCES:
patent: 3570114 (1971-03-01), Bean
patent: 4055444 (1977-10-01), Rao

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