Semiconductor integrated circuit with implanted resistor element

Details Semiconductor integrated circuit with implanted resistor element Semiconductor integrated circuit with implanted resistor element

1980-06-23

1983-10-11

Roy, Upendra

Metal working

Method of mechanical manufacture

Assembling or joining

29571, 148 15, 148187, 357 23, 357 91, H01L 2100, H01L 21263

Patent

active

044083858

ABSTRACT:
Resistor elements for MOS integrated circuits are made by an ion implant step compatible with a self-aligned N-channel silicon-gate process. The resistor elements are in a part of a polycrystalline silicon layer which is also used as a gate for an MOS transistor and as an interconnection overlying field oxide. Resistors of this type are ideally suited for load devices in static RAM cells.

REFERENCES:
patent: 4110776 (1978-08-01), Mohan Rao
patent: 4208781 (1980-06-01), Mohan Rao et al.

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