Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons
Patent
1986-01-14
1987-09-01
Miller, Stanley D.
Electrical transmission or interconnection systems
Nonlinear reactor systems
Parametrons
307200B, 307491, 307496, 307296A, 323311, G05F 316
Patent
active
046911235
ABSTRACT:
A semiconductor memory device of the invention is switched to an operation mode or a standby mode in response to a control signal. When the control signal indicates the standby mode, a voltage converter circuit becomes inoperative, and an external power source voltage is directly supplied to an internal circuit (e.g., a memory circuit). However, in the standby mode the internal circuit has low power consumption, and the voltage converter circuit has no power consumption, thus rendering total power consumption of the semiconductor device low. When the control signal indicates the operation mode, the voltage converter circuit drops the external power source voltage and supplies it to the internal circuit. Thus, no hot electrons are generated in elements constituting the internal circuit (e.g., CMOS transistors), and degradation of the elements is prevented.
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Itoh et al., "An Experimental 1MbDRAM with On-Chip Voltage Limiter," IEEE International Solid-State Circuits Conference, pp. 282-283, 1984.
Hudspeth D. R.
Kabushiki Kaisha Toshiba
Miller Stanley D.
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