Semiconductor integrated circuit with an internal voltage conver

Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons

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Details

307200B, 307491, 307496, 307296A, 323311, G05F 316

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active

046911235

ABSTRACT:
A semiconductor memory device of the invention is switched to an operation mode or a standby mode in response to a control signal. When the control signal indicates the standby mode, a voltage converter circuit becomes inoperative, and an external power source voltage is directly supplied to an internal circuit (e.g., a memory circuit). However, in the standby mode the internal circuit has low power consumption, and the voltage converter circuit has no power consumption, thus rendering total power consumption of the semiconductor device low. When the control signal indicates the operation mode, the voltage converter circuit drops the external power source voltage and supplies it to the internal circuit. Thus, no hot electrons are generated in elements constituting the internal circuit (e.g., CMOS transistors), and degradation of the elements is prevented.

REFERENCES:
patent: 4042841 (1977-08-01), Hills et al.
patent: 4279020 (1981-07-01), Christian et al.
patent: 4281260 (1981-07-01), Moegen et al.
patent: 4363978 (1982-12-01), Heimbigner
patent: 4488067 (1984-12-01), Kraft et al.
patent: 4503341 (1985-03-01), Shah
patent: 4594519 (1986-06-01), Ohtani et al.
Itoh et al., "An Experimental 1MbDRAM with On-Chip Voltage Limiter," IEEE International Solid-State Circuits Conference, pp. 282-283, 1984.

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