Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Patent
1991-12-18
1993-05-04
LaRoche, Eugene R.
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
257775, 437195, H01L 2348, H01L 2182
Patent
active
052086585
ABSTRACT:
By using a contact including a configuration in which a first pattern 10 having a widthwise dimension W1 in an outer shape substantially equal to a lengthwise dimension L1 in an outer shape and a second pattern 20 having a widthwise dimension W2 in an outer shape smaller than the widthwise dimension W1 in an outer shape of the first pattern are connected to each other, over etching is reduced and unevenness of saggings of a photoresist at the time of exposure or baking is lowered. Further, the area of a contact region where a contact can be disposed is effectively used, so that the area of the contact can be increased and electric resistance can be decreased.
REFERENCES:
patent: 3715635 (1973-02-01), Michel et al.
patent: 4500906 (1985-02-01), Ohno et al.
patent: 4677452 (1987-06-01), Zommer
patent: 4916521 (1990-04-01), Yoshikawa et al.
patent: 4951098 (1990-08-01), Albergo et al.
Gaensslen et al., "High-density contact design", IBM TDB, vol. 14, No. 2, Jul./1971, p. 570.
Kawasaki Steel Corporation
LaRoche Eugene R.
Nguyen Viet Q.
LandOfFree
Semiconductor integrated circuit provided with contact for inter does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor integrated circuit provided with contact for inter, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor integrated circuit provided with contact for inter will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1978638