Semiconductor integrated circuit, method of fabricating the same

Details Semiconductor integrated circuit, method of fabricating the same Semiconductor integrated circuit, method of fabricating the same

1992-05-07

1993-11-23

LaRoche, Eugene R.

Active solid-state devices (e.g., transistors, solid-state diode

Non-single crystal, or recrystallized, semiconductor...

Field effect device in non-single crystal, or...

257 68, 257300, 257303, 257304, 257305, H01L 21308, H01L 2966

Patent

active

052647129

ABSTRACT:
A semiconductor integrated circuit comprising first n-channel MISFETs constituting the memory cells of a storage system, second n-channel MISFETs constituting the peripheral circuits of the storage system, and third n-channel MISFETs constituting the output circuit among the peripheral circuits. The respective threshold voltages of the first n-channel MISFETs, the second n-channel MISFETs and the third n-channel MISFETs are decreased in that order when the respective gate lengths of those MISFETs are substantially the same.

REFERENCES:
patent: 4551741 (1985-11-01), Shimotori et al.
patent: 4771323 (1988-09-01), Sasaki
patent: 4882289 (1989-11-01), Moriuchi et al.
patent: 4951175 (1990-08-01), Kurosawa et al.
patent: 4977102 (1990-12-01), Ema
patent: 4984200 (1991-01-01), Satoo et al.
patent: 4989053 (1991-01-01), Shelton

Affiliated with

Also associated with

Rating

Semiconductor integrated circuit, method of fabricating the same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor integrated circuit, method of fabricating the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor integrated circuit, method of fabricating the same will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1851470