Semiconductor integrated circuit isolated through dielectric mat

Details Semiconductor integrated circuit isolated through dielectric mat Semiconductor integrated circuit isolated through dielectric mat

1978-08-31

1980-08-05

Munson, Gene M.

357 34, 357 67, 357 71, H01L 2712, H01L 2972, H01L 2946

Patent

active

042164915

ABSTRACT:
A semiconductor integrated circuit which includes a plurality of island regions surrounded by a bottom dish-like dielectric layer formed on one side of a support body. A transistor element is formed in the island region, and the collector region of the transistor element is formed more adjacent to one surface of the island region than the other regions. The emitter and base electrodes of the transistor element are respectively led out from the bottom side of the island region to the surface of the support body using interior leads. The method for manufacturing the above-described device is also disclosed.

REFERENCES:
patent: 3381182 (1968-04-01), Thornton
patent: 3407479 (1968-10-01), Fordemwalt et al.
patent: 3475664 (1969-10-01), De Vries
patent: 3566214 (1971-02-01), Usuda
patent: 3567508 (1971-03-01), Cox
patent: 3602982 (1971-09-01), Kooi
patent: 3689357 (1972-09-01), Jordan
patent: 3874918 (1975-04-01), Nechtow et al.
patent: 3942187 (1976-03-01), Gelsing et al.
patent: 4131909 (1978-12-01), Matsuda et al.

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