Semiconductor integrated circuit interconnections

Details Semiconductor integrated circuit interconnections Semiconductor integrated circuit interconnections

1981-09-02

1982-12-21

Ozaki, G.

Metal working

Method of mechanical manufacture

Assembling or joining

29589, 29591, 148187, 148188, H01L 21225

Patent

active

043641660

ABSTRACT:
An improved interconnection for semiconductor integrated circuits is provided by a member made of doped polycrystalline silicon and metal silicide that provides the simultaneous advantages of high conductivity and reduced overlap capacitance in multilayer integrated circuit devices. Such interconnecting members are useable to produce field effect transistor type devices.

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patent: 4180596 (1979-12-01), Crowder et al.
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patent: 4296426 (1981-10-01), Gilles
Rideout, IBM Tech. Discl. Bull., vol. 17, No. 6, Nov. 1974, pp. 1831-1833,vol. 18, No. 11, Apr. 1976, pp. 3840 and 3841.
Fortino et al., IBM Tech. Discl. Bull., vol. 20, No. 2, Jul. 1977, pp. 539 and 540, vol. 20, No. 11A, Apr. 1978, pp. 4286 and 4287.

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