Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
Reexamination Certificate
2006-08-08
2006-08-08
Abraham, Fetsum (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Passive components in ics
C257S528000, C257S530000, C438S132000, C438S215000, C438S281000, C438S333000
Reexamination Certificate
active
07087974
ABSTRACT:
An anti-fuse is manufactured by forming an isolation region including an insulating material layer buried in a surface of a device formation region on a surface of a semiconductor substrate, and by forming diffusion regions at both sides of the isolation region, then by contacting electrodes to the respective diffusion regions. The anti-fuse is initially in a non-conductive state, and is programmed to be in a permanently conductive state by a simple writing circuit.
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Katagiri Tomoharu
Kuno Isamu
Abraham Fetsum
Kawasaki Microelectronics Inc.
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