Semiconductor integrated circuit having virtual power supply lin

Miscellaneous active electrical nonlinear devices – circuits – and – Specific identifiable device – circuit – or system – With specific source of supply or bias voltage

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H03K 301

Patent

active

061183288

ABSTRACT:
The invention intends to provide a semiconductor integrated circuit including MOS transistors, which is able to operate at a high-speed with a low power supply voltage in the active mode, and to reduce the power consumption resulting from the leakage current in the standby mode.
In view of the foregoing object, the semiconductor integrated circuit of the invention is comprised of a first power supply line to which a first power supply potential is supplied, a virtual power supply line, a logic circuit connected to the virtual power supply line, a power control transistor provided between the first power supply line and the virtual power supply line, having a control electrode to which a first control signal is inputted, a second power supply line to which a second power supply potential is supplied, and a substrate potential control circuit connected to a substrate on which the power control transistor is formed, the first power supply line, and the second power supply line.

REFERENCES:
patent: 5140623 (1992-08-01), Imai t al.
patent: 5644266 (1997-07-01), Chen et al.
patent: 5821769 (1998-10-01), Douseki
patent: 5917365 (1999-06-01), Houston
Shin'ichiro Mutoh et al., "1-V Power Supply High-Speed Digital Circuit Technology with Multithreshold-Voltage CMOS", IEEE Journal of Solid-State Circuits, vol. 30, No. 8, Aug. 1995, pp. 846-854.

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