Semiconductor integrated circuit having transistor with...

Details Semiconductor integrated circuit having transistor with... Semiconductor integrated circuit having transistor with...

2006-05-23

2006-05-23

Cao, Phat X. (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257S382000

Reexamination Certificate

active

07049698

ABSTRACT:
An increase in the overall resistance value of a transistor is prevented by having different contact resistances for connections between conductors in different wiring layers. The transistor has a first conductive layer having a first resistivity formed over impurity diffusion regions, a first contact group connecting the first conductive layer and the impurity diffusion regions through holes, a second conductive layer having a second resistivity formed over the first conductive layer, and a second contact group connecting the first conductive layer and the second conductive layer through holes. The first contact group and the second contact group have a different total number of contacts.

REFERENCES:
patent: 5844281 (1998-12-01), Narita
patent: 5936283 (1999-08-01), Narita et al.
patent: 6-232345 (1994-08-01), None

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