Semiconductor integrated circuit having silicon nitride provided

Details Semiconductor integrated circuit having silicon nitride provided Semiconductor integrated circuit having silicon nitride provided

1992-06-22

1994-03-22

Carroll, J.

Active solid-state devices (e.g., transistors, solid-state diode

With means to control surface effects

Insulating coating

257532, 257637, 257641, 257649, H01L 2934

Patent

active

052967344

ABSTRACT:
An integrated circuit comprises a semiconductor substrate, a plurality of islands formed at a principal surface of the substrate and isolated from one another by a PN junction, an interlayer insulating film formed to substantially cover the principal surface of the substrate, and a capacitor formed in a selected one of the islands and having a dielectric layer which is formed within an opening formed in the interlayer insulating film above the selected island. The dielectric layer is constituted of a multilayer film including a silicon oxide film and a silicon nitride film extending to cover the interlayer insulating film. A power supply line conductor is formed on the interlayer insulating film, and the silicon nitride film is completely removed from a portion of the interlayer insulating film directly under the power supply line conductor.

REFERENCES:
patent: 4612563 (1986-09-01), Macdougall et al.

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