Semiconductor integrated circuit having reduced wiring capacitan

Details Semiconductor integrated circuit having reduced wiring capacitan Semiconductor integrated circuit having reduced wiring capacitan

1996-05-31

1998-09-29

Ngo, Ngan V.

Active solid-state devices (e.g., transistors, solid-state diode

Gate arrays

With particular signal path connections

257386, 257396, 257503, 257508, H01L 2710, H01L 2976, H01L 2994, H01L 31062

Patent

active

058148485

ABSTRACT:
In a semiconductor integrated circuit, the wiring capacitance of the bus line region is reduced, so that the operation speed can be increased, the power consumption can be decreased, and the chip size can be reduced. On the upper surface of the field oxide film (4) formed on the semiconductor substrate (8), a non-conductive insulating oxide film (12) is formed by oxidizing the poly silicon layer (9). Further, the bus lines (3A) are formed on the oxide film (12) via the interlayer insulating film (6). Therefore, a distance between the bus lines (3A) and the substrate (8) can be increased to decrease the capacitance of the bus lines (3A).

REFERENCES:
patent: 4984050 (1991-01-01), Kobayashi
patent: 5286998 (1994-02-01), Ema
patent: 5414297 (1995-05-01), Marita et al.
patent: 5608241 (1997-03-01), Shibuya et al.
patent: 5608248 (1997-03-01), Ohno

Affiliated with

Also associated with

Rating

Semiconductor integrated circuit having reduced wiring capacitan does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor integrated circuit having reduced wiring capacitan, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor integrated circuit having reduced wiring capacitan will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-687999