Semiconductor integrated circuit having multiple silicon chips

Details Semiconductor integrated circuit having multiple silicon chips Semiconductor integrated circuit having multiple silicon chips

1993-05-20

1995-01-10

James, Andrew J.

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Chip mounted on chip

257783, 257618, 257700, 257622, 257725, 361804, 361759, 361803, H01L 2508, H01L 2312, H01L 2332

Patent

active

053810473

ABSTRACT:
A semiconductor integrated circuit of the laminated type having a large circuit capacity includes an upper silicon tip and a lower silicon tip as essential components and a layer of electrical insulative material is interposed between the upper silicon tip and the lower silicon tip both of which are electrically connected to each other via a number of lead wires extending therebetween. An assembly of the upper silicon tip, the electrical insulative material layer and the lower silicon tip is fixedly mounted on a base board, and the foregoing assembly is then covered with a cap. To prevent the upper silicon tip and the lower silicon tip from being undesirably dislocated from their original locations, at least one first projection is projected downward of the lower surface of the upper silicon tip and a first fitting groove adapted to receive the first projection therein is recessed from the upper surface of the electrical insulative material layer, while at least one second projection is projected upward of the upper surface of the lower silicon tip and a second fitting groove adapted to receive the second projection therein is recessed from the lower surface of the electrical insulative material layer. The upper silicon tip is dimensioned to have a length less than that of the electrical insulative material layer, the electrical insulative material layer is dimensioned to have a length less than that of the lower silicon tip, and the lower silicon tip is dimensioned to have a length less than that of the base board.

REFERENCES:
patent: 4984066 (1991-01-01), Iversen
patent: 4998665 (1991-03-01), Hayashi
patent: 5006920 (1991-04-01), Schafer et al.
Japanese Gazette of Japanese Patent Publication No. HEI3-245462, dated Nov. 1, 1991.

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