Semiconductor integrated circuit having interconnection with imp

Details Semiconductor integrated circuit having interconnection with imp Semiconductor integrated circuit having interconnection with imp

1990-02-09

1991-11-12

James, Andrew J.

357 20, 357 34, 357 49, 357 50, 357 55, H01L 2704, H01L 2972, H01L 2906

Patent

active

050652168

ABSTRACT:
A semiconductor integrated circuit comprises a substrate of a first semiconductor type doped by a first impurity element with a first impurity density, the first semiconductor type being one of p-type and n-type semiconductors, a conductive layer formed on a back surface of the substrate, a first layer of a second semiconductor type doped by a second impurity element different from the first impurity element and formed on a front surface of the substrate, the second semiconductor type being the other of the p-type and n-type semiconductors and the first layer having a second impurity density lower than the first impurity density, a second layer of the first semiconductor type formed on the first layer for forming circuit elements therein, a first region of the second semiconductor type extending from a top surface of the first layer and reaching a top surface of the second layer, and a second region of the first semiconductor type extending from a top surface of the substrate and reaching the top surface of said second layer, the first layer and the second region forming a conductive path for supplying a power source voltage to the circuit elements in the second layer from the back surface of the substrate.

REFERENCES:
patent: 4228448 (1980-10-01), Lalumia et al.
patent: 4631570 (1986-12-01), Birrittella et al.
patent: 4819052 (1989-04-01), Hutter
patent: 4929993 (1990-05-01), Popovic
patent: 4937647 (1990-06-01), Sutton

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