Active solid-state devices (e.g. – transistors – solid-state diode – Gate arrays – Having specific type of active device
Reexamination Certificate
2005-04-19
2005-04-19
Thomas, Tom (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Gate arrays
Having specific type of active device
C257S202000, C257S204000, C257S205000, C257S207000, C257S208000, C257S210000, C257S211000
Reexamination Certificate
active
06881989
ABSTRACT:
A base cell is configured such that P-type regions11to13are arrayed in a column direction in an N-type well10, N-type regions21to23are arrayed in a column direction in a P-type well20next to the N-type well, gate lines34A and35B passing above a channel between the P-type regions and further between the N-type regions are formed in a row direction, and well contact regions16C and26C are formed in the wells10and20at outer ends thereof, respectively, while no gate contacts are formed at the outer ends. Power supply lines VDD and VSS connected to the well contact regions are formed in the column direction in a second wiring layer above a first wiring layer.
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Kajii Yoshio
Osajima Toru
Fujitsu Limited
Westerman Hattori Daniels & Adrian LLP
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