Semiconductor integrated circuit having at least one asymmetrica

Details Semiconductor integrated circuit having at least one asymmetrica Semiconductor integrated circuit having at least one asymmetrica

1994-11-30

1997-03-04

Tran, Minhloan

Active solid-state devices (e.g., transistors, solid-state diode

Gate arrays

Having specific type of active device

257206, 257336, 257338, 257344, 257408, H01L 2710

Patent

active

056082401

ABSTRACT:
The invention provides a semiconductor integrated circuit including a substrate, and a plurality of block cells arranged on the substrate and including a plurality of basic cells. Each of the basic cells includes a plurality of CMOS transistors. At least one of the CMOS transistors is an asymmetrical one in which one of a source diffusion layer or a drain diffusion layer has a lightly doped drain (LDD) structure or a deep doped drain (DDD) structure.

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