Semiconductor integrated circuit having a spark killer diode

Details Semiconductor integrated circuit having a spark killer diode Semiconductor integrated circuit having a spark killer diode

1996-10-30

1998-08-25

Fahmy, Wael

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

With pn junction isolation

257556, H01L 2900

Patent

active

057985600

ABSTRACT:
Buried N.sup.+ layers are formed in the surface of a substrate, on which first and second epitaxial layers are successively deposited. A vertical PNP transistor formed in the surface of the first epitaxial layer has a buried collector layer, a collector lead region, and a base contact region. The buried collector layer, the collector lead region, and the base contact region provide a buried anode layer, an anode lead region, and a cathode contact region, respectively, of a diode. The vertical PNP transistor and the diode are surrounded by N.sup.+ lead regions and the buried N.sup.+ layers.

REFERENCES:
patent: 3327182 (1967-06-01), Kisinko
"Ring-shaped subcollector reach-through contact for vehicle PNP" IBM Technical Disclosure Bulletin; vol. 32, No. 6A Nov. 1989.

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