Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Field effect transistor
Patent
1992-11-13
1994-01-04
Crane, Sara W.
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Field effect transistor
257190, 257499, H01L 29161, H01L 29205, H01L 29225
Patent
active
052763404
ABSTRACT:
A semiconductor integrated circuit including therein a plurality of active devices comprises a semiconductor substrate, a first buffer layer on the substrate, a second buffer layer provided on the substrate and incorporating therein defects with a concentration level substantially larger than the concentration level of the defects in the first buffer layer; a device layer provided on the second buffer layer and being provided with the active devices, and a plurality of unconductive, device isolation regions formed between the active devices such that the device isolation region extends from an upper surface of the device layer toward the substrate at least beyond a lower surface of the device layer.
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patent: 4799088 (1989-01-01), Hiyamizu et al.
patent: 4821090 (1989-04-01), Yokoyama
patent: 4830980 (1989-05-01), Hsieh
patent: 4920396 (1990-04-01), Sinohara et al.
patent: 4972239 (1990-11-01), Mihara
patent: 4987463 (1991-01-01), Goronkin et al.
Igarashi Takeshi
Ishikawa Tomonori
Suzuki Masahisa
Yokoyama Teruo
Crane Sara W.
Fujitsu Limited
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