Semiconductor integrated circuit having a MOS transistor with a

Details Semiconductor integrated circuit having a MOS transistor with a Semiconductor integrated circuit having a MOS transistor with a

1989-01-30

1990-12-11

Hudspeth, David

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

307362, 307264, 307448, H03K 19094

Patent

active

049773399

ABSTRACT:
A semiconductor integrated circuit comprises a positive voltage line, a negative voltage line, a ground line, a first circuit connected between the ground line and one of the positive voltage line and the negative voltage line so as to be driven by a voltage difference between the ground line and the one of the positive voltage line and the negative voltage line, and a second circuit connected between the ground line and the other of the positive voltage line and the negative voltage line so as to be driven by a voltage difference between the ground line and the other of the positive voltage line and the negative voltage line. A signal level conversion circuit includes a MOS transistor having a gate connected to an output of the first circuit and a drain connected through a resistor to the ground line. A source of the transistor is connected to the other of the positive voltage line and the negative voltage line, and the drain of the transistor is connected to an input of the second circuit. This transistor has its threshold voltage whose absolute value is larger than an absolute value of a voltage difference between the ground line and the other of the positive voltage line and the negative voltage line.

REFERENCES:
patent: 4437171 (1984-03-01), Hudson et al.
patent: 4453095 (1984-06-01), Wrathall
patent: 4563601 (1986-01-01), Asano et al.
patent: 4591742 (1986-05-01), Morito
patent: 4656372 (1987-04-01), Savi et al.
patent: 4704549 (1987-11-01), Sanwo et al.
patent: 4719372 (1988-01-01), Chappell et al.
patent: 4767951 (1988-08-01), Cornish et al.
patent: 4788459 (1988-11-01), Tsugaru et al.

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