Active solid-state devices (e.g. – transistors – solid-state diode – Transmission line lead
Patent
1992-10-16
1995-04-11
Larkins, William D.
Active solid-state devices (e.g., transistors, solid-state diode
Transmission line lead
333 22R, 257758, 326 30, H01L 2350, H01L 308, H01P 124
Patent
active
054061180
ABSTRACT:
A semiconductor chip includes a long bus line for transmitting digital signals. The semiconductor chip includes transmission lines for transmitting signals between the bus line and other lines. An impedance regulating element having an impedance, which matches the characteristic impedance of the bus line, is connected to each of the transmission lines.
REFERENCES:
patent: 4626889 (1986-12-01), Yamamoto et al.
patent: 4661831 (1987-04-01), Schmitt-Landsiedel et al.
patent: 5086271 (1992-02-01), Haill et al.
patent: 5208562 (1993-05-01), Schirm, IV
Hamilton & Howard, Basic Integrated Circuit Engineering (McGraw-Hill, NY, 1970) pp. 96-97.
Saito et al., "Drain Current DLTS Spectra and GaAs Substrate Crystal Effect on Low-Frequency-Oscillations of Si-Implanted MESFETs", Mat. Res. Soc. Symp. Proc. vol. 262, pp. 791-795 (1992).
Saito, "Carrier Profile Variation of a Channel Conductive Layer Through Phospho-Silicate-Glass Cap Annealing of N.sup.+ Si-Implanted GaAs Crystals", Mat. Res. Soc. Symp. Proc. vol. 262, pp. 719-723 (1992).
Saito, "Observation of Ring OSC Wave Forms with Same Area CMOS and BiCMOS Inverters Together with hfe Degradation", Extended Abstracts (The 51st Autumn Meeting, 1990), The Japan Society of Applied Physics, 27p-G-13.
Rao et al., "In.sub.0.53 Ga.sub.0.47 As Metal-Semiconductor-Metal Photodetector Using Proton Bombarded P-type Material", J. Appl. Phys., 70(7), 1 Oct. 1991, pp. 3943-3945.
Saito, "GaAs Phase Effect on Interfacial Drain Current of a 400-um-wide Gate Si-implanted MESFET", J. Appl. Phys., 68(2), 15 Jul. 1990, pp. 830-839.
Saito, "Implanted Si Atoms Shifting Between Ga Sites an As Sites by Thermal Stress in Conductive-Layer GaAs Crystals on Semi-Insulating Substrates", J. Appl. Phys. 71(7), 1 Apr. 1992, p. 3544.
Saito et al., "Drain Current DLTS Spectra and GaAs Substrate Crystal Effect on Low-Frequency-Oscillations of Si-Implanted MESFETs", Abstract E9.8, 1992 U.S.A. Material Research Society Spring Meeting.
Japan Texas Instrument Products Information Report SCJ1521 (May 1, 1991).
Kabushiki Kaisha Toshiba
Larkins William D.
LandOfFree
Semiconductor integrated circuit having a long bus line does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor integrated circuit having a long bus line, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor integrated circuit having a long bus line will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1540472