Active solid-state devices (e.g. – transistors – solid-state diode – Bipolar transistor structure – With specified electrode means
Patent
1997-10-29
1999-09-14
Fahmy, Wael M.
Active solid-state devices (e.g., transistors, solid-state diode
Bipolar transistor structure
With specified electrode means
257588, 257559, H01L 27082, H01L 27102, H01L 2900
Patent
active
059527064
ABSTRACT:
A semiconductor integrated circuit having a lateral bipolar transistor, is fabricated in a manner compatible with sub-micron CMOS processing. A base contact structure is formed over a bipolar active area, in essentially direct contact to a portion of the upper surface of the active region, essentially concurrent to the formation of a gate electrode on a gate dielectric layer in a CMOS active area. Sidewall spacers, adjacent the base contact region, are formed and a base region formed under the base contact structure using an oblique angle implantation. Emitter region and collector contact regions are formed concurrent with CMOS source and drain regions. An optional, oblique angle collector implant can be performed where desired.
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Choi Glen B.
Fahmy Wael M.
Kwok Edward C.
National Semiconductor Corporation
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