Semiconductor integrated circuit having a function...

Details Semiconductor integrated circuit having a function... Semiconductor integrated circuit having a function...

2005-04-26

2005-04-26

Le, Dinh T. (Department: 2816)

Miscellaneous active electrical nonlinear devices, circuits, and

Signal converting, shaping, or generating

Amplitude control

C327S198000

Reexamination Certificate

active

06885232

ABSTRACT:
DC voltage VREFproduced in an LSI and having a value between power supply voltage VDDand the ground potential is applied to the gate electrode of pMOS transistor QP1which forms a function determination circuit. Since the gate voltage of a transistor QP1is lower than that in a conventional function determination circuit, current through the transistor QP1is reduced. Hence, the gate length of the transistor QP1can be reduced. When a second pMOS transistor is connected in parallel to the transistor QP1so that the transistor has a function for supplying charge to junction A when power is fed to the LSI, the area of the transistor QP1can be further reduced. When a voltage produced for a purpose other than for the function determination circuit such as a step-down power supply of the LSI is used as DC voltage, the area of the transistor can be reduced.

REFERENCES:
patent: 5117177 (1992-05-01), Eaton, Jr.
patent: 5353250 (1994-10-01), McAdams
patent: 5412333 (1995-05-01), Okunaga

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