Semiconductor integrated circuit formed on an insulator substrat

Details Semiconductor integrated circuit formed on an insulator substrat Semiconductor integrated circuit formed on an insulator substrat

1986-02-19

1989-02-07

Larkins, William D.

357 2312, 357 28, 357 41, H01L 2712, H01L 2978

Patent

active

048035300

ABSTRACT:
A semiconductor integrated circuit formed on an insulator substrate and comprising a drive transistor and a load transistor, in which a threshold voltage of the load transistor is set in the range of -2.8V to -1.0V so as to ensure stable operation without temperature dependency with respect to working speed and power consumption of the circuit.

REFERENCES:
patent: 3700981 (1972-10-01), Masuhara et al.
patent: 3958266 (1976-05-01), Athanas
patent: 4072868 (1978-02-01), De La Moneda et al.
patent: 4395726 (1983-07-01), Maeguchi

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