Semiconductor integrated circuit for high frequency power...

Details Semiconductor integrated circuit for high frequency power... Semiconductor integrated circuit for high frequency power...

2008-07-01

2008-07-01

Nguyen, Lee (Department: 2618)

Telecommunications

Transmitter

With feedback of modulated output signal

C455S127100, C330S133000, C330S285000

Reexamination Certificate

active

07395036

ABSTRACT:
In a high frequency power amplifier circuit in which bias voltages are applied to the transistors for amplification by current mirroring, The power amplifier includes a detection circuit including a transistor for detection which receives the AC component of an input signal to the last-stage transistor for amplification at its control terminal, a current mirror circuit which mirrors current flowing through that transistor, and a current-voltage converter which converts current flowing in the slave side of the current mirror circuit into a voltage. In the detection circuit, a voltage from a bias circuit for generating the bias voltages for the transistors for amplification is applied to the control terminal of the transistor for detections, and output of the detection circuit is applied to the control terminal of the last-stage transistor for amplification.

REFERENCES:
patent: 6625429 (2003-09-01), Yamashita
patent: 2004/0075501 (2004-04-01), Takahashi et al.
patent: 2000-151310 (2000-05-01), None
patent: 2001-016116 (2001-01-01), None
patent: 2004-140518 (2004-05-01), None
patent: 2004/023469 (2004-03-01), None

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