Semiconductor integrated circuit devices having inverted frustum

Details Semiconductor integrated circuit devices having inverted frustum Semiconductor integrated circuit devices having inverted frustum

1976-07-19

1978-12-05

Miller, Jr., Stanley D.

357 34, 357 55, 357 59, 357 68, H01L 2970, H01L 2348

Patent

active

041288459

ABSTRACT:
Inverted frustum shaped polycrystalline semiconductor layers are formed on the emitter and collector regions provided on one surface of a semiconductor substrate, and conductor layers are applied on the upper surfaces of the polycrystalline semiconductor surfaces to form emitter and collector electrodes thus providing a bipolar transistor for the integrated circuit device.

REFERENCES:
patent: 3738880 (1973-06-01), Laker
patent: 3780359 (1973-12-01), Dumke et al.
patent: 3860836 (1975-01-01), Pedersen
patent: 4001762 (1977-01-01), Aoki et al.
Neues aus der Technik, No. 3, 15 Jun. 1974 p. 6.

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