Semiconductor integrated circuit device with protection...

Details Semiconductor integrated circuit device with protection... Semiconductor integrated circuit device with protection...

2006-09-14

2008-05-06

Robinson, Mark A. (Department: 4122)

Active solid-state devices (e.g., transistors, solid-state diode

Gate arrays

With particular signal path connections

C361S055000

Reexamination Certificate

active

07368768

ABSTRACT:
Semiconductor Integrated Circuit (IC) devices such as diode and MOSFET that protect circuits from Electrostatic Discharge (ESD) are formed. A diode is formed by an N+ (or P+) and P+ (or N+) diffusion layers within an N (or P) well on a P (or N) type semiconductor substrate. The N+ (or P+) diffusion layer of the diode is connected to the power supply. Additionally, an NMOSFET (or PMOSFET) is formed with N+ (or P+) source/drain regions and a gate on the same P (or N) type substrate. The P+ (or N+) diffusion layer of the diode and the N+ (or P+) source/drain regions of the NMOSFET (or PMOSFET) are connected to a fuse through second and first levels of metal wirings.

REFERENCES:
patent: 5477413 (1995-12-01), Watt
patent: 6327125 (2001-12-01), Colclaser et al.
patent: 6365938 (2002-04-01), Lee et al.
patent: 6433403 (2002-08-01), Wilford
patent: 7098491 (2006-08-01), Hsieh
patent: 2001/0017755 (2001-08-01), Toyoshima
patent: 2001-244338 (2001-09-01), None
patent: 2003-518745 (2003-06-01), None

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