Semiconductor integrated circuit device with noise reduction...

Details Semiconductor integrated circuit device with noise reduction... Semiconductor integrated circuit device with noise reduction...

2007-12-11

2007-12-11

Pascal, Robert (Department: 2817)

Oscillators

With parasitic oscillation control or prevention means

C331S10800D, C455S303000

Reexamination Certificate

active

11097264

ABSTRACT:
A semiconductor integrated circuit device includes a semiconductor substrate; at least one integrated circuit block formed in the semiconductor substrate; a first electrode pad which receives a first clock, the first electrode pad being disposed on the semiconductor substrate; a wiring line which electrically connects the integrated circuit block and the first electrode pad, the wiring line being disposed on the semiconductor substrate; and a second electrode pad which receives a second clock having the same frequency as and opposite polarity from the first clock, the second electrode pad being disposed in a position adjacent to the first electrode pad on the semiconductor substrate and isolated from the integrated circuit block.

REFERENCES:
patent: 7132900 (2006-11-01), Yahagi et al.
patent: 11-234153 (1999-08-01), None
patent: 2000-269793 (2000-09-01), None
patent: 2001-125744 (2001-05-01), None

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