Semiconductor integrated circuit device with high breakdown volt

Details Semiconductor integrated circuit device with high breakdown volt Semiconductor integrated circuit device with high breakdown volt

1985-05-29

1987-11-10

Miller, Stanley D.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

307300, 307315, 307317A, H03K 19088, H03K 3313, H03K 333

Patent

active

047059680

ABSTRACT:
A first npn transistor 4 becomes conductive when its input is at a first potential, and non-conductive when the input signal is at a second potential. A second npn transistor 6 is connected between an output terminal 7 and a low potential source 8; the base of the second transistor is connected to the collector of the first transistor. A Darlington circuit consists of third and fourth npn transistors 9 and 16a. The base of the third transistor is connected to the collector of the first transistor, and the collector of the third transistor 9 is connected to a high potential source 3. The emitter of the fourth transistor 16a is connected to the output terminal 7. The anode of a Schottky barrier diode 16b is connected to the base of the fourth transistor 16a, and the cathode of the Schottky barrier diode 16b is connected to the collector of the fourth transistor 16a.

REFERENCES:
patent: 4400635 (1983-08-01), Mazgy
patent: 4581550 (1986-04-01), Ferris et al.

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