Semiconductor integrated circuit device with electrode for measu

Active solid-state devices (e.g. – transistors – solid-state diode – Gate arrays – With particular chip input/output means

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Details

257211, 257758, 257 48, H01L 2702, H01L 2710

Patent

active

054669561

ABSTRACT:
A semiconductor integrated circuit device that enables measurement of the capacitance of an insulator film without integration scale reduction in internal circuits. The device has an internal circuit area and an I/O area on a semiconductor substrate. A first bonding pad area redundant for the device and a second bonding pad area used for an I/O terminal are formed in the I/O area. A wiring conductor is formed on the I/O area to extend from the first bonding pad area to the internal circuit area through the second bonding pad area. An interlayer insulator film is formed on the I/O area to cover the wiring conductor. A bonding pad is formed on the interlayer insulator film as the I/O terminal. The bonding pad is provided on the second bonding pad area to be connected to the wiring conductor. An electrode is provided on the first bonding pad area to be opposite to the wiring conductor through the interlayer insulator film, and is isolated from the wiring conductor. A capacitance of the interlayer insulator film is measured by using the electrode and the bonding pad.

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