Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Including dielectric isolation means
Patent
1997-06-27
2000-05-02
Saadat, Mahshid D.
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Including dielectric isolation means
257370, 257378, 257501, 257548, H01L 2976, H01L 2900, H01L 2994
Patent
active
060575883
ABSTRACT:
A semiconductor layer is formed on a semiconductor substrate. A digital circuit region, in which a digital circuit is formed, and an analog circuit region, in which an analog circuit is formed, are separately formed by an isolation region at the surface of the semiconductor layer. At this time, a width of the semiconductor layer in the isolation region is greater than a thickness of the semiconductor substrate. Also, a region having high electrical resistance with low concentration of impurity is formed at the surface of the semiconductor substrate in the isolation region. Furthermore, conductive layers connected to a grounding potential is formed on the backside of the semiconductor substrate in the digital circuit region and on the backside of the semiconductor substrate of the analog region.
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Fenty Jesse A.
NEC Corporation
Saadat Mahshid D.
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