Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
Patent
1994-06-21
1996-12-17
Carroll, J.
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Passive components in ics
257635, 437922, H01L 2900
Patent
active
055856624
ABSTRACT:
A breakable fuse element is incorporated in a semiconductor integrated circuit device, and is overlain by a multi-level insulating film structure having the lowest insulating film covering the breakable fuse element and a multi-level insulating sub-structure over the lowest insulating film, wherein an etching stopper is inserted between the lowest insulating film and the multi-level insulating film sub-structure so that an etching for a laser hole is exactly terminated at the etching stopper, thereby exactly controlling the remaining thickness over the breakable fuse element.
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Full English Translation of Japan Kokai 60-84838 as per USPTO.
S. M. Sze, Semiconductor Devices Physics and Technology, John Wiley & Sons, New York (1985) p. 455.
Carroll J.
NEC Corporation
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