Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – With pn junction isolation
Patent
1992-09-30
1994-03-22
Carroll, J.
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
With pn junction isolation
257378, 257499, 257506, 257517, 257552, 257925, H01L 2702, H01L 2704
Patent
active
052967310
ABSTRACT:
A semiconductor integrated circuit device according to the present invention includes a semiconductor layer of a first conductivity type having a high concentration of impurity atoms which layer is formed in or on predetermined locations of a semiconductor substrate with the first conductivity type which locations requires a resistance to alpha rays. The device of the present invention can decrease the amount of the electron collection to a semiconductor layer of a second conductivity type having a high concentration of impurity atoms which layer is separated from the semiconductor layer of the first conductivity type having a high concentration of impurity atoms. Therefore, the semiconductor integrated circuit device of the present invention can have enhanced resistance to alpha rays without capacitances being increased and maintain a fast speed of circuit operation.
REFERENCES:
patent: 4007478 (1977-03-01), Yagi
patent: 4247862 (1981-02-01), Klein
patent: 4799098 (1989-01-01), Ikeda et al.
patent: 4937648 (1990-06-01), Huang
Carroll J.
NEC Corporation
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