Semiconductor integrated circuit device providing a protection c

Details Semiconductor integrated circuit device providing a protection c Semiconductor integrated circuit device providing a protection c

1980-12-24

1983-12-27

James, Andrew J.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

357 23, 357 59, 307304, 361 56, H01L 2702, H01L 2978, H01L 2904

Patent

active

044234317

ABSTRACT:
A protective semiconductor integrated circuit device for protecting an internal circuit against an excessively high voltage has a first resistor of a low value resistance interposed between an input terminal and an input gate of the internal circuit. One of the drain and source regions of an MIS type transistor is connected to the input gate of the internal circuit to be protected and the other region of the source and drain is grounded. A capacitor is interposed between the gate of the MIS transistor and the input terminal. A second resistor or a diode of reverse polarity is interposed between the gate of the MIS transistor and ground. The protective device may be fabricated using, a bulk silicon, an insulating substrate such as sapphire, spinel or semi-insulating material, simultaneously with the internal circuit and without changing processes for fabrication of the internal circuit and without requiring any additional masking steps.

REFERENCES:
patent: 3777216 (1973-12-01), Armstrong
patent: 4288829 (1981-09-01), Tango
M. Lenzlinger, "Gate Protection of MIS Devices, IEEE Transactions of Electron Devices, vol. ED-18, No. 4 (1971), pp. 249-257.
G. Briggs, S. J. Connor, J. O. Sinniger and R. G. Stewart, "40-MHz CMOS-on-Sapphire Microprocessor", IEEE Transactions on Electron Devices, vol. ED-25, No. 8, (1978), pp. 952-959.

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