Semiconductor integrated circuit device produced by charged-part

Details Semiconductor integrated circuit device produced by charged-part Semiconductor integrated circuit device produced by charged-part

1991-07-11

1993-03-09

Munson, Gene M.

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified configuration

357 59, 257734, 257213, H01L 2978, H01L 2910, H01L 2934, H01L 2906

Patent

active

051929880

ABSTRACT:
A semiconductor integrated circuit device formed on the basis of the design rules of 0.5 .mu.m or less contains a MOS transistor. The MOS transistor is formed at the main surface region of the semiconductor substrate. If the effective gate area of the MOS transistor is S2 and the area of a contact hole made in an interlayer insulating film on the gate electrode of the MOS transistor is S1, the relationship expressed as S1/S2.ltoreq.1.8 is established. The contact hole is made by RIE techniques.

REFERENCES:
patent: 5027186 (1991-06-01), Kinugawa
patent: 5057886 (1991-10-01), Riemenschneider et al.
patent: 5125007 (1992-06-01), Yamaguchi et al.

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