Semiconductor integrated circuit device including two types of M

Details Semiconductor integrated circuit device including two types of M Semiconductor integrated circuit device including two types of M

1991-08-08

1994-02-01

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

Gate arrays

Having specific type of active device

257371, 257374, H01L 2702

Patent

active

052834492

ABSTRACT:
In the semiconductor integrated circuit device of the present invention which uses MOSFETs as its components, the gate electrode of the MOSFET is constructed by using a silicide gate, a polycide gate or a metal gate. The source-drain region of the MOSFET for the internal circuit which does not require connection to an external circuit has a silicide structure, and the source-drain region of the MOSFET for the buffer circuit which requires a direct connection to an external device has a region which is not of silicide structure at least in a portion adjacent to the gate electrode. The gate electrode and the source-drain region of the internal circuit have low resistances so that it is possible to realize an increase in the operating speed by using them as a part of the wirings. Further, in the source-drain region of the buffer circuit there is provided a region of high resistance in the vicinity of the gate electrode so that it is possible to enhance the ESD resistance.

REFERENCES:
patent: 4587718 (1986-05-01), Haken et al.
patent: 4657628 (1987-04-01), Holloway et al.
patent: 4769686 (1988-09-01), Horiuchi et al.
patent: 4901134 (1990-02-01), Misawa et al.
patent: 5060037 (1991-10-01), Rountree
patent: 5060046 (1991-10-01), Shintani
Patent Abstracts of Japan, vol. 11, No. 41 (E-478)(24488), 6 Feb. 1987.
C. K. Lau et al., "Titanium Disilicide Self-Aligned Source/Drain+Gate Technology," IEDM 82, pp. 714-717, 1982.
Chen et al., "Electrostatic Discharge Protection For One Micron CMOS Devices and Circuits," IEDM 86, pp. 484-487, 1986.

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