Static information storage and retrieval – Floating gate – Disturbance control
Reexamination Certificate
2007-02-20
2007-02-20
Nguyen, Viet Q. (Department: 2827)
Static information storage and retrieval
Floating gate
Disturbance control
C365S185100, C365S185140, C365S185260, C365S185280, C365S185330
Reexamination Certificate
active
11061843
ABSTRACT:
A semiconductor integrated device having a plurality of memory cells, each including a floating gate, a control gate and an auxiliary gate formed over a side surface of the floating gate through an insulator film. Auxiliary gates coupled to selected memory cells function to generate hot electrons and are alternately arranged with other auxiliary gates functioning to prevent write errors in the non-selected memory cells.
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“Ohyo Butsuri Or Applied Physics” vol. 65, No. 11, pp. 1114-1124.
Kimura Katsutaka
Kobayashi Naoki
Kobayashi Takashi
Kume Hitoshi
Kurata Hideaki
Antonelli, Terry Stout and Kraus, LLP.
Hitachi , Ltd.
Hitachi Device Engineering & Co., Ltd.
Nguyen Viet Q.
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