Semiconductor integrated circuit device including a protective r

Details Semiconductor integrated circuit device including a protective r Semiconductor integrated circuit device including a protective r

1981-08-06

1985-04-30

Miller, Stanley D.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

307585, 357 2313, 361 91, H03K 1708, H02H 320

Patent

active

045146462

ABSTRACT:
An abnormal surge voltage such as frictional static electricity is often applied to the external terminals of a MOSIC. In the past, the output MOS transistor in the MOSIC during normal handling of the device frequently will have its gate insulating film broken down by the application of such an abnormal surge voltage to the drain thereof. In order to prevent the gate insulating film from being broken down, in this manner a resistor is connected between the gate of the output MOS transistor and a drive circuit for driving that output MOS transistor. This construction using a resistor is superior to the construction in which the voltage to be applied to the drain of the output MOS transistor is clamped by the use of suitable clamp means only because, with the resistor arrangement, the output characteristics of the MOSIC are not restricted.

REFERENCES:
patent: 3754171 (1973-08-01), Anzai et al.
patent: 4011467 (1977-03-01), Shimada et al.
patent: 4027173 (1977-05-01), Nomiya et al.
patent: 4062039 (1977-12-01), Nishimura
patent: 4066918 (1978-01-01), Heuner et al.
patent: 4160923 (1979-07-01), Maeda et al.
patent: 4209713 (1980-06-01), Satou et al.
patent: 4261004 (1981-04-01), Masuhara et al.
patent: 4288829 (1981-09-01), Tango

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